BFP780
High linearity RF medium power transistor
Product description
The BFP780 is a single stage high linearity and high gain driver amplifier based on NPN
silicon germanium technology.
Feature list
•
•
•
•
High maximum RF input power PRFin,max = 20 dBm
Minimum noise figure NFmin = 1.2 dB at 900 MHz, 5 V, 30 mA
OIP3 = 34.5 dBm at 900 MHz, 5 V, 90 mA
OP1dB = 23 dBm at 900 MHz, 5 V, 90 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
•
•
Commercial and industrial wireless infrastructure
ISM band medium power amplifiers and drivers
Automated test equipment
UHF television, CATV and DBS
Device information
Table 1
Part information
Product name / Ordering code
Package Pin configuration
BFP780 / BFP780H6327XTSA1
SOT343
1=B
2=E
Marking Pieces / Reel
3=C
4=E
R1s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v4.0
2018-09-26
BFP780
High linearity RF medium power transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
4.1
4.2
4.3
4.4
Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Datasheet
2
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BFP780
High linearity RF medium power transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
VCE
Collector base voltage
VCB
–
Unit
Note or test condition
V
TA = 25 °C
TA = -40 °C
Max.
6.1
5.1
15
–
Instantaneous total collector current iC
240
mA
DC + RF swing
DC collector current
IC
120
DC base current
IB
-1
5
RF input power
PRFin
–
20
dBm
In- and output matched
Dissipated power
Pdiss
600
mW
TS ≤ 93 °C 1), regard
derating curve in Figure 1.
Junction temperature
TJ
150
°C
–
Operating case temperature
TA
-40
105 2)
Storage temperature
TStg
-55
150
–
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the component.
1
2
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
At the same time regard TJ,max.
Datasheet
3
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BFP780
High linearity RF medium power transistor
Recommended operating conditions
2
Recommended operating conditions
The following table shows examples of recommended operating conditions. As long as maximum ratings are
regarded, operation outside these conditions is permitted, but it may increases failure rate and reduces lifetime.
For further information refer to the quality report available on the BFP780 product page.
Table 3
Recommended operating conditions
Collector
current
DC
RF output Efficiency 4) Dissipated Thermal Junction
2)
power
power 3)
power 5)
resistance temperaof PCB 6) ture 7)
TA
[°C]
IC
[mA]
PDC
[mW]
PRFout
[mW]
(dBm)
η
[%]
Pdiss
[mW]
RthSA
[K/W]
TJ
[°C]
55
90
450
200 (23)
45
250
120
110
Final stage 55
90
450
115 (20.5)
25
340
70
110
High TA
85
50
250
75 (19)
30
175
35
110
Maximum
TA
105
20
100
45 (16.5)
45
55
35
110
Linear
55
50
250
20 (13)
8
230
120
110
Very linear 55
90
450
23 (13.5)
5
430
35
110
Operating Ambient
mode
temperature 1)
Compression
1
2
3
4
5
6
7
Is the operating case temperature respectively of the heatsink.
PDC = VCE* IC with VCE = 5 V.
RF power delivered to the load, PRFout = η * PDC.
Efficiency of the conversion from DC power to RF power, η = PRFout / PDC (collector efficiency).
Pdiss = PDC - PRFout. The RF output power PRFout delivered to the load reduces the power Pdiss to be
dissipated by the device. This means a good output match is recommended.
RthSA is the thermal resistance of the PCB including heat sink, that is between the soldering point S and
the ambient A. Regard the impact of RthSA on the junction temperature TJ, see below. The thermal design
of the PCB, respectively RthSA, has to be adjusted to the intended operating mode.
TJ = TA + Pdiss * RthJA.
RthJA = RthJS + RthSA.
RthJA is the thermal resistance between the transistor junction J and the ambient A.
RthJS is the combined thermal resistance of die and package, which is 95 K/W for BFP780, see Chapter 3.
Datasheet
4
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BFP780
High linearity RF medium power transistor
Thermal characteristics
3
Thermal characteristics
Table 4
Thermal resistance
Parameter
Symbol
Values
Min.
Junction - soldering point
RthJS
–
Typ.
95
Unit
Note or test condition
K/W
–
Max.
–
700
600
400
300
P
diss,max
[mW]
500
200
100
0
Figure 1
Note:
Datasheet
0
25
50
75
T [°C]
S
100
125
150
Absolute maximum power dissipation Pdiss,max = f(TS)
In the horizontal part of the derating curve the maximum power dissipation is given
by Pdiss,max ≈ VCE,max * IC,max. In this part, the junction temperature TJ is lower than TJ,max. In the
declining slope, it is TJ = TJ,max. Pdiss,max has to be reduced according to the curve in order not to
exceed TJ,max. It is TJ,max = TS + Pdiss,max * RthJS.
5
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
4
Electrical performance in test fixture
4.1
DC parameter table
Table 5
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Collector emitter breakdown voltage
Collector emitter leakage current
V(BR)CEO
ICES
6.1
–
Typ.
Unit
Note or test condition
Max.
6.6
–
V
IC = 1 mA, open base
1
0.1
40 1)
3 1)
nA
μA
VCE = 8 V, VBE = 0 V,
VCE = 18 V, VBE = 0 V,
E-B short circuited
Collector base leakage current
ICBO
1
40 1)
nA
VCB = 8 V, IE = 0,
open emitter
Emitter base leakage current
IEBO
–
10 1)
μA
VEB = 0.5 V, IC = 0,
open collector
DC current gain
hFE
160
230
85
4.2
AC parameter tables
Table 6
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Note or test condition
GHz
VCE = 5 V, IC = 90 mA
pF
VCB = 5 V, VBE = 0 V,
f = 1 MHz,
emitter grounded
Max.
fT
Collector base capacitance
CCB
0.37
Collector emitter capacitance
CCE
1.4
VCE = 5 V, VBE = 0 V,
f = 1 MHz,
base grounded
Emitter base capacitance
CEB
3.3
VEB = 0.5 V, VCB = 0 V,
f = 1 MHz,
collector grounded
1
20
Unit
Transition frequency
2
–
Typ.
VCE = 5 V, IC = 90 mA,
pulse measured 2)
–
Accuracy is not limited by the device but by the cycle time of the 100% test.
Test duration 14 ms, duty cycle 46%. Regard that the current gain hFE depends on the junction
temperature TJ and TJ amongst others from the thermal resistance RthSA of the PCB, see notes on Table 3.
Hence the hFE specified in this data sheet must not be the same as in the application. It is recommended
to apply circuit design techniques to make the collector current IC independent on the hFE production
variation and temperature effects.
Datasheet
6
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
Measurement setup for the AC characteristics shown in Table 7 to Table 10 is a test fixture with Bias-T’s and
tuners to adjust the source and load impedance in a 50 Ω system. TA = 25 °C.
VCC
Output-Tuner
Out
ZL
VBB
C
E
Bias-T
DUT
Input-Tuner
In
E
B
ZS
Bias-T
Figure 2
BFP780 testing circuit
Table 7
AC characteristics, VCE = 5 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Unit
Typ.
Max.
Power gain
Maximum power gain
Transducer gain
Gms
|S21|2
27
21.5
IC = 90 mA
Minimum noise figure
Minimum noise figure
NFmin
1.2
IC = 30 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 8
–
Note or test condition
–
OP1dB
OIP3
dB
dBm
ZL = ZL,opt(Pout),
IC = 90 mA
Unit
Note or test condition
23
34.5
AC characteristics, VCE = 5 V, f = 1.8 GHz
Parameter
Symbol
Values
Min.
Typ.
Power gain
Maximum power gain
Transducer gain
Gms
|S21|2
22
15
IC = 90 mA
Minimum noise figure
Minimum noise figure
NFmin
1.4
IC = 30 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
Datasheet
–
Max.
–
dB
dBm
OP1dB
OIP3
22
34
7
ZL = ZL,opt(Pout),
IC = 90 mA
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
Table 9
AC characteristics, VCE = 5 V, f = 2.6 GHz
Parameter
Symbol
Values
Min.
Unit
Typ.
Max.
Power gain
Maximum power gain
Transducer gain
Gma
|S21|2
18
12
IC = 90 mA
Minimum noise figure
Minimum noise figure
NFmin
1.7
IC = 30 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
Table 10
–
Note or test condition
–
OP1dB
OIP3
dB
dBm
ZL = ZL,opt(Pout),
IC = 90 mA
Unit
Note or test condition
22
34
AC characteristics, VCE = 5 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Power gain
Maximum power gain
Transducer gain
Gma
|S21|2
15
8.5
IC = 90 mA
Minimum noise figure
Minimum noise figure
NFmin
2.4
IC = 30 mA
Linearity
1 dB compression point at output
3rd order intercept point at output
Datasheet
–
Max.
–
dB
dBm
OP1dB
OIP3
22
33.5
8
ZL = ZL,opt(Pout),
IC = 90 mA
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
4.3
Characteristic DC diagrams
180
160
140
1.1mA
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
C
I [mA]
120
100
80
60
0.4mA
40
0.2mA
0.3mA
0.1mA
20
0
0mA
0
1
2
3
4
V
CE
Figure 3
Note:
5
6
7
[V]
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
Refer to absolute maximum ratings for IC, VCE and Pdiss.
3
hFE
10
2
10
1
10
0.1
1
10
Ic [mA]
Figure 4
DC Current gain hFE = f(IC), VCE = 5 V
Datasheet
9
100
1000
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
24
C
22
B
RBE
.
18
16
V
( BR)CER
[V]
20
14
E
12
10
8
6
2
10
3
10
4
5
10
10
R
6
10
7
10
[Ω]
BE
Figure 5
Note:
Datasheet
Collector emitter breakdown voltage V(BR)CER = f(RBE)
The above figure shows the collector-emitter breakdown voltage V(BR)CER with a resistor RBE between
base and emitter. Only for very high RBE values ("open base") the breakdown voltage V(BR)CER is as low
as V(BR)CEO (here 6.6 V). With decreasing RBE values V(BR)CER increases, e.g. at RBE = 10 kΩ to V(BR)CEO =
10 V. In the application the biasing base resistance together with block capacitors take over the
function of RBE and allows the RF voltage amplitude to swing up to voltages much higher than
V(BR)CEO, without clipping. Due to this effect the transistor can be biased at VCE = 5 V and still high RF
output powers achieved, see the OP1dB values reported in Chapter 4.2.
10
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
4.4
Characteristic AC diagrams
25
2.00V
3.00V
4.00V
5.00V
fT [GHz]
20
15
10
5
0
0
20
40
60
80
I [mA]
100
120
140
C
Figure 6
Transition frequency fT = f(IC), VCE = parameter
800
700
CCB [fF]
600
2.00V
500
3.00V
4.00V
400
5.00V
300
200
Figure 7
Datasheet
0
20
40
60
80
IC [mA]
100
120
140
Collector base capacitance CCB = f(IC), f = 1 GHz, VCB = parameter
11
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
40
35
G
ms
30
G [dB]
25
20
Gma
15
10
|S21|2
5
0
Figure 8
0
1
2
3
f [GHz]
4
5
6
Gain Gms, Gma, IS21I2 = f(f), VCE = 5 V, IC = 90 mA
32
0.45GHz
30
28
0.90GHz
Gmax [dB]
26
24
22
1.80GHz
20
18
2.60GHz
16
3.50GHz
14
12
0
20
40
60
80
I [mA]
100
120
140
C
Figure 9
Datasheet
Maximum power gain Gmax = f(IC), VCE = 5 V, f = parameter
12
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
32
0.45GHz
30
28
0.90GHz
26
G [dB]
24
22
1.80GHz
20
18
2.60GHz
16
3.50GHz
14
12
0
1
2
3
V
Figure 10
CE
4
5
6
[V]
Maximum power gain Gmax = f(VCE), IC = 90 mA, f = parameter
1
1.5
0.5
0.4
5.0
6.0
7.0
8.0
2
9.0
10.0
11.0
12.0
4.0
0.3
3
4
3.0
0.2
5
0.03 to 12 GHz
2.0
0.1
10
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
1.0
−0.1
0.03
−10
0.03
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
Figure 11
Datasheet
90mA
30mA
Input reflection coefficient S11 = f(f), VCE = 5 V, IC = parameter
13
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
1
1.5
0.5
2
0.4
8.0
9.0
10.0 11.0 12.0
3
7.0
0.3
6.0
0.2
4
5
5.0
0.03 to 12 GHz
4.0
0.1
10
3.0
0.1
0
0.2 0.3 0.4 0.5
1
2.0
1.5
2
3
4 5
1.0
0.03
−0.1
−0.2
−10
−5
−4
−0.3
−3
−0.4
−0.5
−2
90mA
−1.5
−1
Figure 12
30mA
Output reflection coefficient S22 = f(f), VCE = 5 V, IC = parameter
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45 to 4 GHz
0.1
10
0.1
0
0.2 0.3 0.4 0.5
0.9
0.5
2
3
4 5
2.4
2.4
−0.2
1.5
1.5
1.8
0.9
1.5
1.8
−0.1
0.5 1
−10
3.0
3.0
3.5
−5
−4
3.5
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
Figure 13
Datasheet
30mA
90mA
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 5 V, IC = parameter
14
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
4
3.5
3
NFmin [dB]
2.5
2
1.5
I = 90mA
C
IC = 30mA
1
0.5
0
Figure 14
0
0.5
1
1.5
2
f [GHz]
2.5
3
3.5
4
Noise figure NFmin = f(f), VCE = 5 V, ZS = ZS,opt, IC = parameter
4
3.5
3
2
NF
min
[dB]
2.5
1.5
f = 3.5GHz
f = 2.6GHz
f = 1.8GHz
f = 1.5GHz
f = 0.9GHz
f = 0.45GHz
1
0.5
0
0
20
40
60
80
100
IC [mA]
Figure 15
Datasheet
Noise figure NFmin = f(IC), VCE = 5 V, ZS = ZS,opt, f = parameter
15
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
6
5
[dB]
4
NF
50
3
f = 3.5GHz
f = 2.6GHz
f = 1.8GHz
f = 1.5GHz
f = 0.9GHz
f = 0.45GHz
2
1
0
0
20
40
60
80
100
I [mA]
C
Figure 16
Noise figure NF50 = f(IC), VCE = 5 V, ZS = 50 Ω, f = parameter
1
1.5
0.5
2
15
0.4
17.5
3
18.8
0.3
4
19.6
0.2
0.1
0.1
0.2
0.3 0.4 0.5
10
22.6
23
0
5
1
1.5
21.7
2
20.5
3
4 5
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
Figure 17
Datasheet
Load pull contour OP1dB [dBm], VCE = 5 V, IC = 90 mA, f = 900 MHz
16
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BFP780
High linearity RF medium power transistor
Electrical performance in test fixture
1
1.5
0.5
20.5
0.4
2
25
0.3
27.3
3
29.5
0.2
4
5
31
32.5
0.1
0.1
0
0.2
0.3 0.4 0.5
1
34
1.5
10
2
3
4 5
34.7
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
Load pull contour OIP3 [dBm], VCE = 5 V, IC = 90 mA, f = 900 MHz
85
100
IP1dB
Gain [dB], Pout [dBm], PAE [%]
C
80
B
R1
R2
80
IC
E
60
PAE
40
75
IC [mA]
Figure 18
70
Pout
20
0
−20
Gain
−15
−10
−5
P [dBm]
0
5
65
60
10
in
Figure 19
Note:
Datasheet
Pout, Gain, IC, PAE = f(Pin), VCE = 5 V, f = 900 MHz, R1 = 270 Ω, R2 = 8 kΩ, ZL = ZL,opt(Pout)
The curves shown in this chapter have been generated using typical devices but shall not be
understood as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
17
v4.0
2018-09-26
BFP780
High linearity RF medium power transistor
Package information SOT343
0.9 ±0.1
Package information SOT343
1.25 ±0.1
0.15 -0.05
+0.10
A
0.1
0.1 MIN.
0.1
2.1 ±0.1
A
2
1
3x
+0.10
0.3 -0.05
0.6 -0.05
+0.10
1.3
2 ±0.2
0.1
3
4
0.15
0.2
0.1 MAX.
5
MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
]
Figure 20
Package outline
Figure 21
Foot print
TYP E CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Figure 22
Marking layout example
4
0.2
2.3
8
2
P IN 1
INDEX MARKING
2.15
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [
Figure 23
Datasheet
1.1
]
Tape dimensions
18
v4.0
2018-09-26
BFP780
High linearity RF medium power transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
4.0
2018-09-26
New datasheet layout.
Datasheet
19
v4.0
2018-09-26
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Edition 2018-09-26
Published by
Infineon Technologies AG
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IFX-ebx1468299694130
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